Ultrahigh-Q photonic crystal cavities in silicon rich nitride.

نویسندگان

  • Kapil Debnath
  • Marco Clementi
  • Thalía Domínguez Bucio
  • Ali Z Khokhar
  • Moïse Sotto
  • Katarzyna M Grabska
  • Daniele Bajoni
  • Matteo Galli
  • Shinichi Saito
  • Fredric Y Gardes
چکیده

Ultrahigh-Q Photonic Crystal cavities were realized in a suspended Silicon Rich Nitride (SiNx) platform for applications at telecom wavelengths. Using a line width modulated cavity design we achieved a simulated Q of 520,000 with a modal volume of 0.77(λ/n)3. The fabricated cavities were measured using the resonance scattering technique and we demonstrated a measured Q of 120,000. The experimental spectra at different input power also indicate that the non-linear losses are negligible in this material platform.

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عنوان ژورنال:
  • Optics express

دوره 25 22  شماره 

صفحات  -

تاریخ انتشار 2017